Diode

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In electronics, a diode is a Electronic components that restricts the directional flow of charge carriers. Essentially, a diode allows an electric current to flow in one direction, but blocks it in the opposite direction. Thus, the diode can be thought of as an electronic version of a check valve. Circuits that require current flow in only one direction typically include one or more diodes in the circuit design.

Early diodes included Cat's whisker diode and vacuum tube devices (called thermionic valves in British English). Today the most common diodes are made from semiconductor materials such as silicon or germanium.

History Thermionic and solid state diodes developed in parallel. The principle of operation of Thermionic emission diodes was discovered by Frederick Guthrie in 1873. 1928 Nobel Prize article on the diode The principle of operation of crystal diodes was discovered in 1874 by the German scientist, Karl Ferdinand Braun. Historical lecture on Karl Braun

Thermionic diode principles were rediscovered by Thomas Edison on February 13, 1880 and he was awarded a patent in 1883 (), but developed the idea no further. Braun patented the crystal rectifier in 1899 . Braun’s discovery was further developed by Sir Jagdish Bose into a useful device for radio detection.

The first radio receiver using a crystal diode was built around 1900 by Greenleaf Whittier Pickard. The first thermionic diode was patented in Britain by John Ambrose Fleming (scientific adviser to the Marconi Company and former Edison employee) on November 16, 1904 ( in November 1905). Pickard received a patent for a silicon crystal detector on November 20, 1906 ().

At the time of their invention such devices were known as rectifiers. In 1919 William Henry Eccles coined the term diode from Greek and Latin roots; di means ‘two’, and ode (from odos) means ‘path’.

Thermionic or gaseous state diodes Thermionic diodes are thermionic valve devices (also known as vacuum tubes), which are arrangements of electrodes surrounded by a vacuum within a glass envelope, similar in appearance to incandescent light bulbs.

In thermionic valve diodes, a current is passed through the heater Electrical filament. This indirectly heats the cathode, another filament treated with a mixture of barium and strontium oxides, which are oxides of alkaline earth metals; these substances are chosen because they have a small work function. (Some valves use direct heating, in which the heating current is passed through the cathode itself.) The heat causes thermionic emission of electrons into the vacuum envelope. In forward operation, a surrounding metal electrode, called the anode, is positively charged, so that it electrostatics attracts the emitted electrons.However, electrons are not easily released from the unheated anode surface when the voltage polarity is reversed and hence any reverse flow is a very tiny current.

For much of the 20th century thermionic valve diodes were used in analog signal applications, and as rectifiers in power supplies. Today, valve diodes are only used in niche applications, such as rectifiers in guitar and hi-fi valve amplifiers, and specialized high-voltage equipment.

==Semiconductor diodes==

Most modern diodes are based on semiconductor p-n junctions. In a p-n diode, conventional current can flow from the p-type side (the anode) to the n-type side (the cathode), but cannot flow in the opposite direction.Another type of semiconductor diode, the Schottky diode, is formed from the contact between a metal and a semiconductor rather than by a p-n junction.

A semiconductor diode’s Current-voltage characteristic curve is ascribed to the behavior of the so-called depletion zone or depletion zone which exists at the p-n junction between the differing semiconductors. When a p-n junction is first created, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (places for electrons in which no electron is present) with which the electrons “recombine”. When a mobile electron recombines with a hole, the hole vanishes and the electron is no longer mobile. Thus, two charge carriers have vanished. The region around the p-n junction becomes depleted of charge carriers and thus behaves as an nonconductor.

However, the depletion width cannot grow without limit. For each electron-hole pair that recombines, a positively-charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region. As recombination proceeds and more ions are created, an increasing electric field develops through the depletion zone which acts to slow and then finally stop recombination. At this point, there is a “built-in” potential across the depletion zone.

If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator preventing a significant electric current. This is the p-n junction phenomenon. However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed resulting in substantial electric current through the p-n junction. For silicon diodes, the built-in potential is approximately 0.6 V. Thus, if an external current is passed through the diode, about 0.6 V will be developed across the diode such that the P-doped region is positive with respect to the N-doped region and the diode is said to be “turned on” as it has a p-n junction.

A diode’s I-V characteristic can be approximated by two regions of operation. Below a certain difference in potential between the two leads, the depletion layer has significant width, and the diode can be thought of as an open (non-conductive) circuit. As the potential difference is increased, at some stage the diode will become conductive and allow charges to flow, at which point it can be thought of as a connection with zero (or at least very low) resistance. More precisely, the transfer function is logarithmic, but so sharp that it looks like a corner on a zoomed-out graph (see also signal processing).

In a normal silicon diode at rated currents, the voltage drop across a conducting diode is approximately 0.6 to 0.7 volts. The value is different for other diode types — Schottky diodes can be as low as 0.2 V and light-emitting diodes (LEDs) can be 1.4 V or more (Blue LEDs can be up to 4.0 V).

Referring to the I-V characteristics image, in the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range) for all reverse voltages up to a point called the Peak Inverse Voltage (PIV). Beyond this point a process called reverse avalanche breakdown occurs which causes the device to be damaged along with a large increase in current. For special purpose diodes like the avalanche diode or zener diodes, the concept of PIV is not applicable since they have a deliberate breakdown beyond a known reverse current such that the reverse voltage is “clamped” to a known value (called the zener voltage or breakdown voltage). These devices however have a maximum limit to the current and power in the zener or avalanche region.

Shockley diode equation The Shockley ideal diode equation or the diode law (named after transistor co-inventor William Shockley, not to be confused with tetrode inventor Walter H. Schottky) is the I-V characteristic of an ideal diode in either forward or reverse bias (or no bias). It is derived with the assumption that the only processes giving rise to current in the diode are drift (due to electrical field), diffusion, and thermal recombination-generation. It also assumes that the recombination-generation (R-G) current in the depletion region is insignificant. This means that the Shockley equation doesn’t account for the processes involved in reverse breakdown and photon-assisted R-G. Additionally, it doesn’t describe the “leveling off” of the I-V curve at high forward bias due to internal resistance, nor does it explain the practical deviation from the ideal at very low forward bias due to R-G current in the depletion region.

I=I_\mathrm{S} \left( e^{V_\mathrm{D}/(n V_\mathrm{T})}-1 \right),\,

where I is the diode current, IS is a scale factor called the saturation current, VD is the voltage across the diode, VT is the thermal voltage, and n is the emission coefficient, also known as the ideality factor.

The saturation current IS is typically very small, so the diode current is often approximated as

I=I_\mathrm{S} e^{V_\mathrm{D}/(n V_\mathrm{T})}

The emission coefficient n varies from about 1 to 2 depending on the fabrication process and semiconductor material and in many cases is assumed to be approximately equal to 1 (thus omitted). The thermal voltage VT is approximately 25.7 mV at room temperature (25 °C or 298 K) and is a known constant. It is defined by:

V_\mathrm{T} = \frac{k T}{q},

where q is the magnitude of charge on an electron (the elementary charge), k is Boltzmann's constant, T is the absolute temperature of the p-n junction.

Hydrodynamic analogy The diode, in the manner of a valve, allows the passage of the current only in one direction. It is a polarized dipole, the anode and cathode is thus located on the component.Image:Diode analogie hydrodynamique bloquee.gif|The valve is closed, the current is blockedImage:Diode analogie hydrodynamique passante.gif|The valve is opened, the current passes

Types of semiconductor diode |- align = "center"| | | | |- align = "center"| Diode| Zener diode| Schottky diode| Tunnel diode|- align = "center"| | | | |- align = "center"| light-emitting diode| Photodiode| [Silicon controlled rectifier

There are several types of junction diodes, which either emphasizes a different physical aspects of a diode often by geometric scaling, doping level, choosing the right electrodes, are just an application of a diode in a special circuit, or are really different devices like the Gunn and laser diode and the JFET: Normal (p-n) diodeswhich operate as described above. Usually made of doped silicon or, more rarely, germanium. Before the development of modern silicon power rectifier diodes, cuprous oxide and later selenium was used; its low efficiency gave it a much higher forward voltage drop (typically 1.4–1.7 V per “cell”, with multiple cells stacked to increase the peak inverse voltage rating in high voltage rectifiers), and required a large heat sink (often an extension of the diode’s metal substrate), much larger than a silicon diode of the same current ratings would require. The vast majority of all diodes are the p-n diodes found in CMOS integrated circuits, which include 2 diodes per pin and many other internal diodes. Switching diodesSwitching diodes, sometimes also called small signal diodes, are a single p-n diode in a discrete package. A switching diode provides essentially the same function as a switch. Below the specified applied voltage it has high resistance similar to an open switch, while above that voltage it suddenly changes to the low resistance of a closed switch. They are used in devices such as ring modulation. Schottky diodesWalter H. Schottky diodes are constructed from a metal to semiconductor contact. They have a lower forward voltage drop than any p-n junction diode. Their forward voltage drop at forward currents of about 1 mA is in the range 0.15 V to 0.45 V, which makes them useful in voltage Clamper and prevention of transistor saturation. They can also be used as low loss rectifiers although their reverse leakage current is generally much higher than non Schottky rectifiers. Schottky diodes are majority carrier devices and so do not suffer from minority carrier storage problems that slow down most normal diodes — so they have a faster “reverse recovery” than any p-n junction diode. They also tend to have much lower junction capacitance than PN diodes and this contributes towards their high switching speed and their suitability in high speed circuits and RF devices such as switched-mode power supply, Frequency mixers and Detector (radio). Super Barrier DiodesSuper barrier diodes are rectifier diodes that incorporate the low forward voltage drop of the Schottky diode with the surge-handling capability and low reverse leakage current of a normal p-n junction diode. “Gold-doped” diodesAs a dopant, gold (or platinum) acts as recombination centers, which help a fast recombination of minority carriers. This allows the diode to operate at signal frequencies, at the expense of a higher forward voltage drop. Gold doped diodes are faster than other p-n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p-n diodes)..S. M. Sze, Modern Semiconductor Device Physics, Wiley Interscience, ISBN 0-471-15237-4 A typical example is the 1N914. Step recovery diode or Step recovery diodesThe term ‘step recovery’ relates to the form of the reverse recovery characteristic of these devices. After a forward current has been passing in an Step recovery diode and the current is interrupted or reversed, the reverse conduction will cease very abruptly (as in a step waveform). SRDs can therefore provide very fast voltage transitions by the very sudden disappearance of the charge carriers. Point-contact diodesThese work the same as the junction semiconductor diodes described above, but its construction is simpler. A block of n-type semiconductor is built, and a conducting sharp-point contact made with some group-3 metal is placed in contact with the semiconductor. Some metal migrates into the semiconductor to make a small region of p-type semiconductor near the contact. The long-popular 1N34 germanium version is still used in radio receivers as a detector and occasionally in specialized analog electronics. Cat's whisker diodeThese are a type of point contact diode. The cat’s whisker diode consists of a thin or sharpened metal wire pressed against a semiconducting crystal, typically galena or a piece of coal. The wire forms the anode and the crystal forms the cathode. Cat’s whisker diodes were also called crystal diodes and found application in crystal radio receivers. Cat’s whisker diodes are obsolete. PIN diodesA PIN diode has a central un-doped, or intrinsic, layer, forming a p-type / intrinsic / n-type structure. They are used as radio frequency switches and attenuators. They are also used as large volume ionizing radiation detectors and as photodetectors. PIN diodes are also used in power electronics, as their central layer can withstand high voltages. Furthermore, the PIN structure can be found in many power semiconductor devices, such as IGBTs, power MOSFETs, and thyristors. Varicap or varactor diodesThese are used as voltage-controlled capacitors. These are important in PLL (phase-locked loop) and FLL (frequency-locked loop) circuits, allowing tuning circuits, such as those in television receivers, to lock quickly, replacing older designs that took a long time to warm up and lock. A PLL is faster than a FLL, but prone to integer harmonic locking (if one attempts to lock to a broadband signal). They also enabled tunable oscillators in early discrete tuning of radios, where a cheap and stable, but fixed-frequency, crystal oscillator provided the reference frequency for a voltage-controlled oscillator. Zener diodesDiodes that can be made to conduct backwards. This effect, called Zener breakdown, occurs at a precisely defined voltage, allowing the diode to be used as a precision voltage reference. In practical voltage reference circuits Zener and switching diodes are connected in series and opposite directions to balance the temperature coefficient to near zero. Some devices labeled as high-voltage Zener diodes are actually avalanche diodes (see below). Two (equivalent) Zeners in series and in reverse order, in the same package, constitute a transient absorber (or Transorb, a registered trademark). They are named for Dr. Clarence Melvin Zener of Southern Illinois University, inventor of the device. Avalanche diodesDiodes that conduct in the reverse direction when the reverse bias voltage exceeds the breakdown voltage. These are electrically very similar to Zener diodes, and are often mistakenly called Zener diodes, but break down by a different mechanism, the avalanche effect. This occurs when the reverse electric field across the p-n junction causes a wave of ionization, reminiscent of an avalanche, leading to a large current. Avalanche diodes are designed to break down at a well-defined reverse voltage without being destroyed. The difference between the avalanche diode (which has a reverse breakdown above about 6.2 V) and the Zener is that the channel length of the former exceeds the “mean free path” of the electrons, so there are collisions between them on the way out. The only practical difference is that the two types have temperature coefficients of opposite polarities. transient voltage suppression diode (TVS)These are avalanche diodes designed specifically to protect other semiconductor devices from high-voltage transients. Their p-n junctions have a much larger cross-sectional area than those of a normal diode, allowing them to conduct large currents to ground without sustaining damage. PhotodiodesAll semiconductors are subject to optical charge carrier generation. This is typically an undesired effect, so most semiconductors are packaged in light blocking material. Photodiodes are intended to sense light(photodetector), so they are packaged in materials that allow light to pass, and are usually PIN (the kind of diode most sensitive to light). A photodiode can be used in solar cells, in photometry (optics), or in optical communications. Light-emitting diodes (LEDs)In a diode formed from a Direct bandgap semiconductor, such as gallium arsenide, carriers that cross the junction emit photons when they recombine with the majority carrier on the other side. Depending on the material, wavelengths (or colors) from the infrared to the near ultraviolet may be produced. The forward potential of these diodes depends on the wavelength of the emitted photons: 1.2 V corresponds to red, 2.4 to violet. The first LEDs were red and yellow, and higher-frequency diodes have been developed over time. All LEDs are monochromatic; “white” LEDs are actually combinations of three LEDs of a different color, or a blue LED with a yellow scintillator coating. LEDs can also be used as low-efficiency photodiodes in signal applications. An LED may be paired with a photodiode or phototransistor in the same package, to form an opto-isolator. Laser diodesWhen an LED-like structure is contained in a optical cavity formed by polishing the parallel end faces, a laser can be formed. Laser diodes are commonly used in optical storage devices and for high speed optical communication.

Esaki or tunnel diodesthese have a region of operation showing negative resistance caused by quantum tunneling, thus allowing amplification of signals and very simple bistable circuits. These diodes are also the type most resistant to nuclear radiation. Gunn diodesThese are similar to tunnel diodes in that they are made of materials such as GaAs or InP that exhibit a region of negative resistance. With appropriate biasing, dipole domains form and travel across the diode, allowing high frequency microwave electronic oscillator to be built. Peltier–Seebeck effectare used as sensors, heat engines for thermoelectric cooling. Charge carriers absorb and emit their band gap energies as heat.

Current-limiting diodeThese are actually a JFET with the gate shorted to the source, and function like a two-terminal current-limiting analog to the Zener diode; they allow a current through them to rise to a certain value, and then level off at a specific value. Also called CLDs, constant-current diodes, diode-connected transistors, or current-regulating diodes.,

Other uses for semiconductor diodes include sensing temperature, and computing analog logarithms (see Operational amplifier applications#Logarithmic).

Numbering A standardized 1N-series numbering system was introduced in the US by EIA/JEDEC (Joint Electron Device Engineering Council) about 1960. Among the most popular in this series were: 1N34A/1N270 (Germanium signal), IN914/1N4148 (Silicon signal) and 1N4001-1N4007 (Silicon 1A power rectifier).

Related devices

Transistor
Thyristor or silicon controlled rectifier (SCR)
TRIAC
DIAC

Applications Radio demodulation The first use for the diode was the demodulation of amplitude modulation (AM) radio broadcasts. The history of this discovery is treated in depth in the radio article. In summary, an AM signal consists of alternating positive and negative peaks of voltage, whose amplitude or “envelope” is proportional to the original audio signal, but whose average value is zero. The diode (originally a crystal diode) rectifier the AM signal, leaving a signal whose average amplitude is the desired audio signal. The average value is extracted using a simple electronic filter and fed into an audio transducer, which generates sound.

Power conversion Rectifiers are constructed from diodes, where they are used to convert alternating current (AC) electricity into direct current (DC). Similarly, diodes are also used in Cockcroft-Walton generator voltage multipliers to convert AC into very high DC voltages.

Over-voltage protection Diodes are frequently used to conduct damaging high voltages away from sensitive electronic devices. They are usually reverse-biased (non-conducting) under normal circumstances. When the voltage rises above the normal range, the diodes become forward-biased (conducting). For example, diodes are used in ( stepper motor and H-bridge ) motor controller and relay circuits to de-energize coils rapidly without the damaging voltage spikes that would otherwise occur. (Any diode used in such an application is called a flyback diode). Many integrated circuits also incorporate diodes on the connection pins to prevent external voltages from damaging their sensitive transistors. Specialized diodes are used to protect from over-voltages at higher power (see #Types of semiconductor diode above).

Logic gates Diodes can be combined with other components to construct logical conjunction and logical disjunction logic gates. This is referred to as diode logic.

Ionising radiation detectors In addition to light, mentioned above, semiconductor diodes are sensitive to more energy radiation. In electronics, cosmic rays and other sources of ionising radiation cause noise pulses and single and multiple bit errors.This effect is sometimes exploited by particle detectors to detect radiation. A single particle of radiation, with thousands or millions of electron volts of energy, generates many charge carrier pairs, as its energy is deposited in the semiconductor material. If the depletion layer is large enough to catch the whole shower or to stop a heavy particle, a fairly accurate measurement of the particle’s energy can be made, simply by measuring the charge conducted and without the complexity of a magnetic spectrometer or etc.These semiconductor radiation detectors need efficient and uniform charge collection and low leakage current. They are often cooled by liquid nitrogen. For longer range (about a centimetre) particles they need a very large depletion depth and large area. For short range particles, they need any contact or un-depleted semiconductor on at least one surface to be very thin. The back-bias voltages are near breakdown (around a thousand volts per centimetre). Germanium and silicon are common materials. Some of these detectors sense position as well as energy.They have a finite life, especially when detecting heavy particles, because of radiation damage. Silicon and germanium are quite different in their ability to convert gamma rays to electron showers.

Semiconductor detectors for high energy particles are used in large numbers. Because of energy loss fluctuations, accurate measurement of the energy deposited is of less use.

Temperature measuring A diode can be used as a temperature measuring device, since the forward voltage drop across the diode depends on temperature. From the Shockley ideal diode equation given above, it appears the voltage has a positive temperature coefficient (at a constant current) but in fact, it has a dominant negative temperature coefficient making Vd(T) typically around −2.2 mV per degree Celsius.

charge-coupled devices Digital cameras and similar units use arrays of photodiode, integrated with readout circuitry.

Twin circuit battery charging Small boats typically have two circuits each with their own battery/batteries: one used for engine starting; one used for domestics. Normally both are charged from a single alternator, and a heavy duty split charge diode is used to prevent the higher charge battery (typically the engine battery) from discharging through the lower charged battery when the alternator is not runninghttp://mysite.orange.co.uk/springnuts/docs/alternator.pdf.

Additional Diodes may also be referred to as controlled rectifiers, abbreviated CR on printed wiring boards.

See also

Diode modelling

Notes

External links

The Unusual Diode FAQ
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"Device Cross Section" for pn diode, Schottky diode, and silicon controlled rectifier.

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